3D V-NAND Technology
Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today’s conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint.
Achieve incredible read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You can obtain up to 2x faster random read write speeds than the award-winning Samsung 840 EVO. The 850 EVO delivers class-leading performance in sequential read (540MB/s) and write (520MB/s) speeds. Plus, gain optimized random performance in all QD for better real-world performance. RAPID Mode Samsung’s Magician software enables RAPID Mode for up to 2x faster performance by utilizing unused PC memory (DRAM) as a high-speed cache. The newest version of Samsung Magician supports up to a 4 GB cache on a system with 16 GB of DRAM.
Enhanced Endurance and Reliability
The 850 EVO doubles the endurance and reliability compared to the previous generation 840 EVO and features a class-leading 5 year warranty. With enhanced long-term reliability, the 850 EVO assures longterm dependable performance of up to 30% longer than the previous generation 840 EVO.
Improved Energy Efficiency
The 850 EVO delivers significantly longer battery life on your notebook with a controller designed and optimized for 3D V-NAND that supports. Device Sleep for Windows at a highly efficient 2mW. The 850 EVO supports 25% better power efficiency than the 840 EVO during write operations thanks to ultra-efficient 3D V-NAND only consuming 50% less energy than that of traditional Planar 2D NAND.
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- Brand : Samsung
- Model : 850 EVO M.2
- Form Factor : M.2
- Capacity : 250GB
- Memory Components : 3-D Vertical
- Interface : SATA III
- Controller : MGX
- Innovative 3D V-NAND Technology
- Incredible Read/Write Performance
- Enhanced Endurance and Reliability
- The Most Evolved SSD for Ultra-thin Laptops.
|Model||850 EVO M.2|
|Memory Components||3-D Vertical|
|Max Sequential Read||Up to 540 MBps|
|Max Sequential Write||Up to 500 MBps|
|4KB Random Read||Up to 97,000 IOPS|
|4KB Random Write||Up to 89,000 IOPS|